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dc.contributor.authorLysenko, Sergiy
dc.contributor.authorFernández, Felix
dc.contributor.authorRúa, Armando
dc.contributor.authorSepúlveda, Nelson
dc.contributor.authorAparicio-Bolaños, Joaquín A.
dc.date.accessioned2017-07-20T17:19:19Z
dc.date.available2017-07-20T17:19:19Z
dc.date.issued2014-12
dc.identifier.citation“Light Scattering by Epitaxial VO2 Films Near the Metal-Insulator Transition Point”, J. Appl. Phys. http://dx.doi.org/10.1063/1.4921057, 117, 184304, 2015.en_US
dc.identifier.urihttp://hdl.handle.net/11721/1661
dc.description.abstractExperimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.en_US
dc.language.isoen_USen_US
dc.publisherAIP Publishingen_US
dc.subjectThin film structureen_US
dc.subjectLight scatteringen_US
dc.subjectAtomic force microscopyen_US
dc.subjectElasticityen_US
dc.subjectEpitaxyen_US
dc.titlePhotoinduced insulator-to-metal transition and surface statistics of VO2 monitored by elastic light scatteringen_US
dc.typeArticleen_US
dc.identifier.doihttp://aip.scitation.org/doi/abs/10.1063/1.4921057en_US
dc.local.DepartmentOtheren_US
dc.local.FacultySelect from the list belowen_US


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